Intel and Micron announce 128Gb NAND flash

Device is manufactured in 20nm using High-K Metal gates.

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IMFT, the subsidiary jointly owned by Intel (NASDAQ:INTC) and Micron (NASDAQ:MU) have announced the industry’s first 128Gb NAND device.

The device is fabbed using a 20nm process and is expected to ship in volume in the first half of 2012, but with immediate effect IMFT has started production of a 64Gb device using the same technology.

“It is gratifying to see the continued NAND leadership from the Intel-Micron joint development with yet more firsts as our manufacturing teams deliver these high-density, low-cost, compute-quality 20-nm NAND devices,” said Rob Crooke, Intel vice president and general manager of Intel’s non-volatile memory solutions division.

Other manufacturers have previously announced 64Gb devices in a technology referred to as 20nm class, which actually just means that the devices are smaller than 28nm.  According to Intel and Micron the device is the first to use a planar cell structure that overcomes scaling constraints on standard floating-gate NAND flash memories by integrating the HKMG gate stack on NAND production.S|A

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